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A novel, bias-dependent, small-signal model of the dual-gate MESFET

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1 Author(s)
M. Schoon ; Div. of Network Theory, Chalmers Univ. of Technol., Goteborg, Sweden

A dual-gate MESFET from NEC (NE25000) has been measured and modeled. S-parameters and drain-to-source currents calculated from the model are in good agreement with measured data. The model consists of a cascode of two intrinsic, single-gate, nonlinear FET-models embedded in a network representing the device parasitics. A step-by-step procedure has been used to determine the 47 parameters of the model. DC-measurements were used to find starting values for some of the parameters of the nonlinear models. The parasitic capacitances were determined from three-port S-parameters measured at VDS=0 V, IDS=0 A and V(G1S)=V(G2S)=-4.0V. The parasitic inductances and resistances were determined from S-parameters measured at the same bias-point but with forward-biased gates, and from DC-measurements. The final model-optimization was done by simultaneously fitting the model to drain-to-source currents and three-port S-parameters measured at several different, active bias-points (VDS >0)

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:42 ,  Issue: 2 )