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The effects of metal-n+ interface and space charge limited conduction on the performance of amorphous silicon thin-film transistors

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2 Author(s)
Gadelrab, S.M. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; Chamberlain, Savvas G.

We derive a contact current density expression that accounts for both the metal-n+ film interface resistance and the space charge limited conduction in amorphous silicon thin-film transistors. Our model demonstrates that the metal-n+ interface behavior dominates over space charge limited conduction for the a-Si:H film thicknesses used in pixel switching

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 3 )