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An improved analytical model for collector currents in lateral bipolar transistors

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1 Author(s)
K. Joardar ; Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA

Detailed analyses of the lateral bipolar transistor have been performed and a physically based model for the collector current developed. Hybrid mode operation of the lateral BJT in the presence of a gate electrode has been considered. Two-dimensional current flow in the base has also been taken into account without the use of empirical parameters. Comparisons with numerical simulations, existing models, and experimental data have been performed to demonstrate the accuracy and improvements realized by the new model

Published in:

IEEE Transactions on Electron Devices  (Volume:41 ,  Issue: 3 )