By Topic

Effects of surface pretreatment of polysilicon electrode prior to Si3N4 deposition on the electrical characteristics of Si3N4 dielectric films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yoon, G.W. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Joshi, A.B. ; Kwong, D.L. ; Mathews, V.K.
more authors

Effects of various surface pretreatments of polysilicon electrode prior to Si3N4 deposition on leakage current, time-dependent dielectric breakdown (TDDB) and charge trapping characteristics of thin Si3N4 films deposited on rugged and smooth poly-Si are investigated. Surface pretreatments consist of different combinations of HF clean, rapid thermal H2 -Ar clean, and rapid thermal NH3-nitridation (RTN) and are intended to modify the surface of bottom poly-Si electrode. Results show that RTN treatments lead to lower leakage current, reduced charge trapping, and superior TDDB characteristics as compared to rapid thermal H2-Ar clean

Published in:

Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 3 )