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Reduction of p-doped mirror electrical resistance of GaAs/AlGaAs vertical-cavity surface-emitting lasers by delta doping

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7 Author(s)
Kojima, K. ; Solid State Technol. Center, AT&T Bell Lab., Breinigsville, PA, USA ; Morgan, R.A. ; Mullaly, T. ; Guth, G.D.
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Reports the reduction of p-mirror electrical resistance using a very simple delta doping technique. The differential resistance was reduced almost by half, and the peak output power was increased by about 40% with delta doping. No significant difference was observed in threshold current and efficiency.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 20 )