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High temperature operation of 1.3 mu m GaInAsP/InP GRINSCH strained-layer quantum well lasers

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4 Author(s)
T. Namegaya ; Yokohama R&D Labs., Furakaw Electr. Co. Ltd., Japan ; A. Kasukawa ; N. Iwai ; T. Kikuta

The well number of 1.3 mu m GaInAsP/InP strained-layer GRINSCH quantum well lasers has been experimentally investigated in terms of the temperature dependence of the threshold current. A very high CW operating temperature of 170 degrees C with a threshold current of 46.2 mA was obtained for an HR coated laser with eight wells.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 4 )