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Influence of GaAs buffer thickness on low-frequency and microwave noise in GaAs MESFETs grown on InP substrates

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5 Author(s)
Chertouk, M. ; France Telecom, CNET, Bagneux, France ; Boudiaf, A. ; Chovet, A. ; Azoulay, R.
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The dependence on the GaAs buffer layer thickness of the low and high frequency noise performance of GaAs MESFETs grown on InP substrates has been investigated. The 1/f noise magnitude at f=1 kHz and the minimum noise figure Fmin in the 2-12 GHz frequency range, measured for a buffer layer thickness increases. The results obtained for a buffer thickness of 3 mu m or more are close to those observed on the bulk GaAs and are consistent with the GaAs layer crystalline improvement observed by X-ray diffraction measurements.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 4 )