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Reliable high-power (40 mW) operation of transverse-mode stabilised InGaAlP laser diodes with strained active layer

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5 Author(s)
K. Nitta ; Toshiba Corp., Kawasaki, Japan ; M. Okajima ; Y. Nishikawa ; K. Itaya
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Reliable high-power operation of transverse-mode stabilised InGaAlP laser diodes has been achieved by using a selectively-buried-ridge waveguide structure with a very thin (150 AA) active layer. A strained In0.62Ga0.38P active layer and a 800 mu m cavity length were employed to reduce the operation current density at high-power and high-temperature operation. A highly reliable operation for over 2000 h has been achieved with a 40 mW output at 40 degrees C. The lifetime of the lasers was limited by the operation current density.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 11 )