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The first InxGa1-xAs/In0.53Ga0.47As strained emitter heterojunction bipolar transistor (SEHBT), with x=0.41, grown by molecular beam epitaxy on n+-InP substrate are reported. A small signal current gain of 480 and a small offset voltage of 56 mV were obtained. These good results were achieved with a thin emitter layer of 360 AA.
Date of Publication: 21 May 1992