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Novel In0.41Ga0.59As/In0.53Ga0.47As strained emitter heterojunction bipolar transistor grown by molecular beam epitaxy

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2 Author(s)
Huang, C.C. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Lin, H.-H.

The first InxGa1-xAs/In0.53Ga0.47As strained emitter heterojunction bipolar transistor (SEHBT), with x=0.41, grown by molecular beam epitaxy on n+-InP substrate are reported. A small signal current gain of 480 and a small offset voltage of 56 mV were obtained. These good results were achieved with a thin emitter layer of 360 AA.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 11 )