The author reviews silicon epitaxial equipment and processing advances that have contributed to epitaxial base bipolar technology. He addresses equipment design and surface cleaning requirements for a manufacturable low-temperature epitaxial process. Single-wafer and batch multiwafer equipment designs and processing, as well as possible clustered configurations for improved process capabilities, are discussed
Published in:
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Date of Conference: 7-8 Oct 1992