Cart (Loading....) | Create Account
Close category search window

Charge separation for bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Kosier, S.L. ; Univ., of Arizona, Tucson, AZ, USA ; Shrimpf, R.D. ; Nowlin, R.N. ; Fleetwood, D.M.
more authors

The effect of net positive oxide trapped charge and surface recombination velocity on excess base current in BJTs (bipolar junction transistors) is identified. Although the interaction of these two radiation-induced defects is physically complex, simple approaches for estimating these quantities from measured BJT characteristics are presented. The oxide charge is estimated using a transition voltage in the plot of excess base current vs. emitter bias. Two approaches for quantifying the effects of surface recombination velocity are described. The first measures surface recombination directly using a gated diode. The second estimates its effects using an intercept current that is easily obtained from the BJT itself. The results are compared to two-dimensional simulations and measurements made on test structures. The techniques are simple to implement and provide insight into the mechanisms and magnitudes of radiation-induced damage in BJTs

Published in:

Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 6 )

Date of Publication:

Dec 1993

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.