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Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics

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19 Author(s)
Dentan, M. ; CEN Saclay, Gir-sur-Yvette, France ; Delagnes, E. ; Fourches, N. ; Rouger, M.
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The authors present results obtained on a rad-hard mixed analog-digital technology that integrates monolithically complementary MOS (CMOS) transistors, complementary junction FETs (CJFETs), and complementary bipolar transistors (C-bipolars). This technology is expected to satisfy the hard constraints of Large Hadron Collider (LHC) detector electronics. These three families of transistors have been chosen to offer large flexibility of design. MOS and bipolar transistors provide electrical characteristics close to those of modern BiCMOS technologies and will allow the design on the same chip of both analog and digital fast rad-hard circuits. JFET transistors will permit designs of low-noise very rad-hard circuits for room or cryogenic temperature operation. The results show devices with rad-hard performances against neutrons and gamma particles in the range of 1×1014 n/cm2 (1 MeV) and 10 Mrads (SiO2), well suited to LHC detector requirements. JFETs, which have shown a low sensitivity to protons (500 MeV) up to 1×1014, are very rad-hard against ionizing dose as well as displacement damages

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Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 6 )