By Topic

Heavy ion and proton analysis of a GaAs C-HIGFET SRAM

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)

The authors present heavy-ion and proton upset measurements, including total dose and displacement damage, on a one-micron, GaAs, complementary-heterostructure insulated-gate FET (C-HIGFET) 1k×1k static random-access memory (SRAM). Single event upset (SEU) characteristics show a two-order-of-magnitude improvement over GaAs MESFET technology. Heavy-ion upset equilibrium measurements show that all cells upset with equal probability at the 5% linear energy transfer (LET) threshold. This indicates that for this device the shape of the cross section versus LET curve is a result of a probability distribution that applies to all cells and is not the result of variations in cell sensitivities. The data set also indicates that the traditional two-dimensional cos(θ) normalization to LET and fluence is not applicable to this technology

Published in:

IEEE Transactions on Nuclear Science  (Volume:40 ,  Issue: 6 )