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Temperature dependent GaAs MMIC radiation effects

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3 Author(s)
Anderson, W.T. ; US Naval Res. Lab., Washington, DC, USA ; Gerdes, J. ; Roussos, J.A.

The temperature dependence of pulsed neutron and flash X-ray radiation effects was studied in GaAs MMICs (monolithic microwave integrated circuits). Above room temperature the long-term current transients are dominated by electron trapping in previously existing defects. At low temperatures in the range 126 to 259 K, neutron-induced lattice damage appears to play an increasingly important role in producing long-term current transients

Published in:

Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 6 )

Date of Publication:

Dec 1993

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