Cart (Loading....) | Create Account
Close category search window
 

Total dose failures in advanced electronics from single ions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Oldham, T.R. ; US Army Res. Lab., Adelphi, MD, USA ; Bennett, K.W. ; Beaucour, J. ; Carriere, T.
more authors

Hard errors from single heavy ions have been reported in advanced commercial CMOS memories. The authors examine the physical interactions of ions with MOS gate oxides-charge generation, recombination, transport, and trapping. They also consider device and circuit characteristics. They conclude that hard errors from single ions are to be expected, and should not be considered surprising

Published in:

Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 6 )

Date of Publication:

Dec 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.