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Total dose failures in advanced electronics from single ions

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6 Author(s)
Oldham, T.R. ; US Army Res. Lab., Adelphi, MD, USA ; Bennett, K.W. ; Beaucour, J. ; Carriere, T.
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Hard errors from single heavy ions have been reported in advanced commercial CMOS memories. The authors examine the physical interactions of ions with MOS gate oxides-charge generation, recombination, transport, and trapping. They also consider device and circuit characteristics. They conclude that hard errors from single ions are to be expected, and should not be considered surprising

Published in:

Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 6 )

Date of Publication:

Dec 1993

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