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Single-event dynamics of high-performance HBTs and GaAs MESFETs

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6 Author(s)
McMorrow, D. ; US Naval Res. Lab., Washington, DC, USA ; Weatherford, T. ; Knudson, A.R. ; Tran, L.H.
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Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs (heterojunction bipolar transistors) following 3.0-MeV α-particle and 620-nm picosecond laser excitation reveal charge-collection efficiencies up to 28 times smaller than for GaAs MESFETs, with ~90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. It is shown that picosecond laser excitation reproduces the ion-induced transients nicely providing a valuable tool for the investigation of charge-collection and SEU (single event upset) phenomena in these devices

Published in:

Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 6 )

Date of Publication:

Dec 1993

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