By Topic

Numerical simulation of heavy ion charge generation and collection dynamics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Dussault, H. ; Dept. of Nucl. Eng. & Eng. Phys., Rensselaer Polytech. Inst., Troy, NY, USA ; Howard, J.W., Jr. ; Block, R.C. ; Pinto, M.R.
more authors

Describes a complete simulation approach to investigating the physics of heavy-ion charge generation and collection during a single event transient in a p-n diode. The simulations explore the effects of different ion track models, applied biases, background dopings and LET (linear energy transfer) on the transient responses of a p-n diode. The simulation results show that ion track structure and charge collection via diffusion-dominated processes play important roles in determining device transient responses. The simulations show no evidence of rapid charge collection in excess of that deposited in the device depletion region in typical funneling time frames. Further, the simulations clearly show that the device transient responses are not simple functions of the ion's incident LET. The simulation results imply that future studies should consider the effects of ion track structure and extend transient charge collection times to insure that reported charge collection efficiencies include diffusion-dominated collection processes

Published in:

Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 6 )