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Degradation of silicon AC-coupled microstrip detectors induced by radiation

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7 Author(s)
Bacchetta, N. ; INFN, Sezione di Padova, Italy ; Bisello, D. ; Canali, C. ; Fuochi, P.G.
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Results are presented showing the radiation response of AC-coupled FOXFET biased microstrip detectors and related test patterns to be used in the microvertex detector of the CDF experiment at Fermi National Laboratory. Radiation tolerance of detectors to gamma and proton irradiation has been tested, and the radiation-induced variations of the DC electrical parameters have been analyzed. The long-term postirradiation behavior of detector characteristics has been studied, and the relevant room-temperature annealing phenomena have been examined. The main radiation damage effects after gamma or proton irradiation of FOXFET biased microstrip detectors consist of an increase in the total leakage current, while both the detector dynamic resistance and FOXFET switching voltage decrease

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Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 6 )