By Topic

Stable high-power operation of self-aligned stepped substrate (S 3) AlGaInP visible laser diode with small beam aspect ratio

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)

The authors have developed a selfaligned stepped substrate (S3) AlGaInP laser diode with a small beam aspect ratio and stable high-temperature high-output-power operation. The laser had the index-guided laser structure, and was fabricated by only one-step MOVPE. The width of the laser waveguide was decreased to enlarge the beam divergence in the horizontal direction. Also, the strained multiquantum-well active layer was modified to reduce the high temperature operation current by introducing GaInAsP well layers. As a result, the laser had a beam aspect ratio of 1.5 and stable 35 mW operation for more than 1000 h at 50°C

Published in:

Electronics Letters  (Volume:30 ,  Issue: 5 )