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New pin MOSFET structure for hot carrier suppression

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4 Author(s)
Manna, I. ; Microelectron. Res. Center, Texas Univ., Austin, TX ; Jung, L. ; Bhattacharya, S. ; Banerjee, S.

As an alternative to lightly doped drain (LDD) structures, a new pin MOSFET structure has been developed with near-intrinsic doping in the channel near the source/drain ends. This new structure has better hot carrier suppression, current drive capability and short channel effects compared to LDD MOSFETs

Published in:

Electronics Letters  (Volume:30 ,  Issue: 5 )