By Topic

Annealing properties of high quality Nb/Al-AlO/sub x//Nb tunnel junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Oliva, A. ; Dipartimento di Fisica, Salerno Univ., Italy ; Monaco, R.

High quality, low current density Josephson tunnel junctions are obtained from Nb/Al-AlO/sub x//Nb trilayers, using a SNAP process to define the junction area. A large number of junctions has been annealed in air for several hours at temperatures as high as 300/spl deg/C. The most relevant effects observed were: a) a marked decrease of the junction current density and a related increase of the normal-state resistance; b) under suitable conditions, a barrier quality improvement measured in terms of the subgap current and of the quality factor V/sub m/; the most remarkable result is a V/sub m/ as large as 2.5 V at T=1.2 K for our best sample. We believe that oxygen diffusion through the Nb grain boundaries is the main mechanism responsible for the normal-state resistance increase and that device quality variation is closely related to the modification of the barrier interfaces.<>

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:4 ,  Issue: 1 )