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An accurate analytical propagation delay model for high-speed CML bipolar circuits

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2 Author(s)
K. M. Sharaf ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; M. I. Elmasry

A new analytical delay model for high-speed CML circuits is presented. It is applicable to high-speed/low-voltage-swing silicon and HBT CML circuits operating at medium or high current densities. The model is based on bipolar SPICE parameters file, and can be used to estimate the propagation delay time of CML circuits under different operating conditions. The detailed transient analysis accounts for delay components due to each element in the complete SPICE bipolar transistor model. The comparison to SPICE circuit simulation results show excellent agreement for a wide range of state-of-the-art technologies and circuit parameters. The new model predicts the delay time with less than 5% error in most cases. The influence of the finite slopes (slewing rate) of the input signal and the device dimensions is also investigated. The delay model determined the optimum current i0 (or load resistor RL) for a transistor of a certain emitter area when driven by a source of a voltage swing (ΔV) and slew time (tr ). At a specified power dissipation, the delay model is used to optimally size the transistor emitter area for maximum switching speed. The model provides circuit and device guidelines to minimize the propagation delay time and improve the performance of high-speed CML circuits

Published in:

IEEE Journal of Solid-State Circuits  (Volume:29 ,  Issue: 1 )