Referenced Items are not available for this document.
It is shown that the use of surface passivation ledges and local negative feedback with an unbypassed emitter resistance reduce the AM noise of AlGaAs/GaAs heterojunction bipolar transistors (HBT's). The simultaneous use of both techniques improves the AM noise by 9 dB at 100 Hz offset. The correspondence between reductions in baseband noise and AM noise are described.<
Published in:
Microwave and Guided Wave Letters, IEEE
(Volume:4
,
Issue:
2
)
Date of Publication: Feb. 1994
- Page(s):
- 45 - 47
- ISSN :
- 1051-8207
- INSPEC Accession Number:
- 4656787
- Digital Object Identifier :
- 10.1109/75.267712
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb. 1994
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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