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High-power low-threshold Ga0.88In0.12As0.10Sb0.90-Al 0.47Ga0.53As0.04Sb0.96 double heterostructure lasers grown by liquid phase epitaxy

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8 Author(s)
Grunberg, P. ; Equipe de Microoptoelectron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier ; Baranov, A. ; Fouillant, C. ; Lazzari, J.L.
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Ga0.88In0.12As0.10Sb0.90 /Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers emitting at 2.05 μm have been grown by liquid phase epitaxy on GaSb substrates. For pulsed operation of 300 μm wide broad stripe lasers, output power as high as 80 mW per facet and threshold current density as low as 1.7 kA/cm2 have been obtained for cavity lengths of 300 and 900 μm respectively. Mesa-stripe lasers 200 μm long showed room temperature threshold current of 200 mA with a characteristic temperature T0=115 K

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Electronics Letters  (Volume:30 ,  Issue: 4 )