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New CMOS compatible junction-isolated lateral base resistance controlled thyristor

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1 Author(s)

A new 550 V lateral base resistance controlled thyristor structure is proposed and its operation is rigorously characterised by two-dimensional numerical simulation in the off-state, on-state, and turn-off transient mode. Simulations indicate a 40% lower forward voltage drop over a comparable LIGBT, and a superior switching property over other competing lateral thyristor structures

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Electronics Letters  (Volume:30 ,  Issue: 3 )