By Topic

Simple crystal growth of Si-Ge alloy by ion implantation and sequential rapid thermal anneal

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kal, S. ; Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur ; Kasko, I. ; Ryssel, H.

The single crystal growth of Si-Ge alloy was studied in germanium implanted silicon substrate. Ge+ ions were implanted on ⟨100⟩, p-type silicon substrate at a dose of 1016 cm-2. As implanted samples were annealed sequentially at a temperature of 700-1000°C for different times in an RTA system to crystallise the amorphous layer. The SNMS technique was used to determine the compositional analysis, and RBS in the channelling mode was performed to characterise the samples

Published in:

Electronics Letters  (Volume:30 ,  Issue: 3 )