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High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 μm

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3 Author(s)
Choi, H.K. ; Lincoln Lab., MIT, Lexington, MA, USA ; Turner, G.W. ; Eglash, S.J.

High-power diode lasers emitting at /spl sim/1.9 μm have been fabricated from a quantum-well heterostructure having an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. For devices 300 μm wide and 1000 μm long, single-ended output power as high as 1.3 W cw has been obtained with an initial differential quantum efficiency of 47%. The pulsed threshold current density is as low as 143 A/cm2 for 2000-μm-long devices.

Published in:

Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 1 )