By Topic

Observation of degradation recovery in 1.3-μm GaInAsP-InP inverted-rib semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Soon Fatt Yoon ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

This paper reports some effects arising from interrupted lifetest of 1.3-μm GaInAsP-InP inverted-rib laser diodes. This unconventional lifetest method involves constant power biasing at 4 mW/facet and 8 mW/facet, respectively, at 50°C, followed by a period during which the devices were left unbiased at room temperature (off-test period). At the end of the off-test period, the devices were put back on constant power biasing at 50°C. A pronounced reduction in the threshold current, current for 4 mW/facet and 8 mW/facet were observed during the initial part of the off-test period. Similar improvements were also seen in the external quantum efficiency with corresponding variations also occurring in the device series resistance, characteristic temperature, threshold junction voltage, and the emission spectra linewidth. Such recovery effects have so far been observed to occur only in the GaInAsP-InP inverted-rib devices

Published in:

Journal of Lightwave Technology  (Volume:12 ,  Issue: 1 )