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High-temperature superconductive devices on sapphire

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4 Author(s)
Guo-Chun Liang ; Conductus Inc., Sunnyvale, CA, USA ; Withers, R.S. ; Cole, B.F. ; Newman, N.

The low-loss and uniform dielectric properties of sapphire make it attractive for high-performance microwave devices using high-temperature superconductors. YBa2Cu3O7-δ films have been deposited on oxide-buffered 5-cm-diameter wafers and demonstrated a surface resistance of 0.5 mΩ at 10 GHz and 77 K. Long (9-ns) stripline delay lines have for the first time been produced on these substrates and have a measured insertion loss of 1.5 dB at 6 GHz and 77 K. Design techniques appropriate for the dielectric anisotropy of sapphire are discussed

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:42 ,  Issue: 1 )

Date of Publication:

Jan 1994

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