By Topic

High-temperature superconductive devices on sapphire

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Guo-Chun Liang ; Conductus Inc., Sunnyvale, CA, USA ; R. S. Withers ; B. F. Cole ; N. Newman

The low-loss and uniform dielectric properties of sapphire make it attractive for high-performance microwave devices using high-temperature superconductors. YBa2Cu3O7-δ films have been deposited on oxide-buffered 5-cm-diameter wafers and demonstrated a surface resistance of 0.5 mΩ at 10 GHz and 77 K. Long (9-ns) stripline delay lines have for the first time been produced on these substrates and have a measured insertion loss of 1.5 dB at 6 GHz and 77 K. Design techniques appropriate for the dielectric anisotropy of sapphire are discussed

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:42 ,  Issue: 1 )