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High temperature silicon carbide MOSFETs with very low drain leakage current

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8 Author(s)
Billon, T. ; CEA-Technol. Avancees, Grenoble, France ; Ouisse, T. ; Lassagne, P. ; Jassaud, C.
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Inversion mode n-channel MOSFETs have been built on (6H) silicon carbide (SiC) substrates, with thermal oxide as the gate insulator, and with channel lengths ranging from 1 to 25 mu m. Drain leakage currents lower than 0.04 pA/ mu m channel width have been experimentally obtained at temperatures up to 400 degrees C and Vd=5 V.

Published in:

Electronics Letters  (Volume:30 ,  Issue: 2 )

Date of Publication:

20 Jan 1994

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