By Topic

Silicon fusion bonding for pressure sensors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Petersen, K. ; NovaSensor, Fremont, CA, USA ; Barth, P. ; Poydock, J. ; Brown, J.
more authors

Two novel processes for fabricating silicon piezoresistive pressure sensors are presented. The chips described are used to demonstrate an important silicon/silicon bonding technique called silicon fusion bonding (SFB). Using this technique, single-crystal silicon wafers can be reliably bonded with near-perfect interfaces without the use of intermediate layers. Pressure transducers fabricated with SFB exhibit greatly improved performance over devices made with conventional processes. SFB is also applicable to many other microchemical structures.<>

Published in:

Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE

Date of Conference:

6-9 June 1988