By Topic

A CMOS process for high temperature sensors and circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Brown, R.B. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Wu, K.-C. ; Ghezzo, M. ; Brown, D.M.

Progress in junction-isolated CMOS technology for high-temperature operation is reported. Variations on an advanced 1.25- mu m VLSI process have addressed two of the most serious high-temperature problems in CMOS: refractory metallization has eliminated the problem of electromigration; and process variations have doubled latchup holding voltage and current at 300 degrees C. The high-temperature process has improved both holding current and holding voltage at 300 degrees C by more than a factor of two over the already excellent performance of the standard A/VLSI process. Holding voltage at 300 degrees C is four times better in the special process than in bulk CMOS, and holding current is 30 times better than in the bulk process.<>

Published in:

Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE

Date of Conference:

6-9 June 1988