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Multi-zone model for the transient enhanced diffusion of ion implanted impurities in silicon during rapid thermal annealing

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3 Author(s)
Huang, T.H. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Kinoshita, H. ; Kwong, D.L.

A diffusion model for ion-implanted BF2+ ions in Si for rapid thermal annealing application has been developed based on the effects of defect evolution on dopant diffusion. In addition, a simple, accurate and universal precipitation model has been developed for high dose implantation. Simulation results show excellent agreement with the experimental results.

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VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on

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