Multi-zone model for the transient enhanced diffusion of ion implanted impurities in silicon during rapid thermal annealing

A diffusion model for ion-implanted BF/sub 2//sup +/ ions in Si for rapid thermal annealing application has been developed based on the effects of defect evolution on dopant diffusion. In addition, a simple, accurate and universal precipitation model has been developed for high dose implantation. Simulation results show excellent agreement with the experimental results.<
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