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Electrical properties of ZnSe Langmuir-Blodgett film MIS devices

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6 Author(s)
Das-Gupta, D.K. ; Sch. of Electron. Eng. Sci., Univ. Coll. of North Wales, Bangor, UK ; Townshend, P. ; Williams, J.O. ; Mayers, F.R.
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A typical set of current-voltage characteristics of an Au-GaAs-ZnSe-Au device in the temperature range of -23.5 to 53°C is presented. It is demonstrated that the conduction mechanism in sandwich structures of Au-GaAs-ZnSe-Au is electrode limited, the Schottky barrier being lowered at the interface. This barrier has been observed to be nonideal, possible due to the presence of interface states at the ZnSe surface

Published in:

Electrical Insulation and Dielectric Phenomena, 1988. Annual Report., Conference on

Date of Conference:

16-20 Oct 1988