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Modeling of intra-cell defects in CMOS SRAM

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3 Author(s)
Al-Assadi, W.K. ; Colorado State Univ., Fort Collins, CO, USA ; Malaiya, Y.K. ; Jayasumana, A.P.

The effect of defects within a single cell of a static random access memory (SRAM) is examined. All major types of faults, including bridging, transistor stuck-open and stuck-on, are examined. A significant fraction of all faults cause high IDDQ values to be observed. Faults leading to inter-cell coupling are identified

Published in:

Memory Testing, 1993., Records of the 1993 IEEE International Workshop on

Date of Conference:

9-10 Aug 1993