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Realization of tensile strain on GaAs substrates for polarization independent optical modulation

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2 Author(s)
Yuen-Chuen Chan ; Dept. of Electron. Eng., Tokyo Univ., Japan ; K. Tada

The quantum-confined Stark effect of tensile-strained GaAs-InAlAs quantum wells grown on top of a related nonpseudomorphic InAlAs grid layer on GaAs substrates was studied. It was demonstrated by waveguide absorption measurements that polarization-independent optical modulation in tensile-strained GaAs wells is possible in a wavelength range of around 870 nm.<>

Published in:

IEEE Photonics Technology Letters  (Volume:5 ,  Issue: 12 )