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A high-performance delta -doped GaAs/In/sub x/Ga/sub 1-x/As pseudomorphic high electron mobility transistor utilizing a graded In/sub x/Ga/sub 1-x/As channel

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5 Author(s)
Shieh, H.-M. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Wei-Chou Hsu ; Hsu, Rong-Tay ; Wu, Chang-Luen
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A delta -doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This structure had an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density a high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 mu m. The maximum transconductance versus gate bias extended over a broad and flat region of more than 2 V at 300 K. A low gate leakage current (<10 mu A at -7 V) at 300 K was obtained.<>

Published in:

Electron Device Letters, IEEE  (Volume:14 ,  Issue: 12 )