Referenced Items are not available for this document.
A delta -doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This structure had an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density a high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 mu m. The maximum transconductance versus gate bias extended over a broad and flat region of more than 2 V at 300 K. A low gate leakage current (<10 mu A at -7 V) at 300 K was obtained.<
Published in:
Electron Device Letters, IEEE
(Volume:14
,
Issue:
12
)
Date of Publication: Dec. 1993
- Page(s):
- 581 - 583
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4660903
- Digital Object Identifier :
- 10.1109/55.260796
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec. 1993
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
