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Polycrystalline silicon thin-film transistors with two-step annealing process

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5 Author(s)
M. Bonnel ; France Telecom, Lannion, France ; N. Duhamel ; L. Haji ; B. Loisel
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Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature furnace annealing and high-temperature rapid thermal annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step annealing material exhibit better measured characteristics than those obtained by using conventional furnace annealing.<>

Published in:

IEEE Electron Device Letters  (Volume:14 ,  Issue: 12 )