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CMOS-compatible silicon devices on thin SiO2 membranes

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3 Author(s)
M. A. Gajda ; Cavendish Lab., Cambridge Univ. ; H. Ahmed ; J. Dodgson

A novel method of fabricating low power silicon-based devices on thermally insulating membranes for use in sensing applications is presented. The devices can be operated at temperatures of ~250°C with power consumption not exceeding 25mW

Published in:

Electronics Letters  (Volume:30 ,  Issue: 1 )