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A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis

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2 Author(s)
Kosina, H. ; Inst. fur Microelectron., Tech. Univ. Wien, Austria ; Selberherr, S.

A hybrid simulator suitable for modeling small semiconductor devices has been developed in which Monte Carlo and drift-diffusion models are combined. In critical device regions, the position-dependent coefficients of an extended drift-diffusion equation are extracted from a Monte Carlo simulation. Criteria for identifying these regions are described. Additional features which make the code more efficient are presented. First, a free-flight time calculation method using a new self-scattering algorithm is described. It allows for an efficient reduction of self-scattering events. Second, a unique Monte Carlo-Poisson coupling scheme has been developed which converges faster than all presently known schemes. It exploits the so-called Monte Carlo-drift diffusion coupling technique, which also forms the basis of the hybrid method. The simulator has been used to model submicron MOSFET's with gate lengths down to 0.15 μm. In addition to the non-local effects occurring in these devices, the performance of the hybrid simulation method is analyzed

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:13 ,  Issue: 2 )