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A parameter extraction method using cutoff measurement for a large-scale HSPICE model of HBT's

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2 Author(s)
Seonghearn Lee ; Semicond. Dev. Res. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea ; Sang Wong Kang

We present an accurate parameter extraction method for the HBT large-signal equivalent circuit model in which several extrinsic parasitics are connected to HSPICE BJT model. The measured Gummel plot are used to extract DC model parameters of HBT using HSPICE. Capacitances are then obtained from S-parameter measurements of the HBTs biased to cutoff. The other parameters are determined from the active device S-parameters. The large-signal modeled Gummel plot and S-parameters show good agreement with the measured ones, respectively

Published in:

IEEE Transactions on Electron Devices  (Volume:41 ,  Issue: 1 )