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Analysis of the latch and breakdown phenomena in N and P channel thin film SOI MOSFET's as a function of temperature

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6 Author(s)
Balestra, F. ; Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France ; Jomaah, J. ; Ghibaudo, G. ; Faynot, O.
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A study of the latch and breakdown phenomena in thin film N- and P-channel SOI MOSFET's is performed as a function of temperature. For P-type MOSFET's, for which no investigation of the parasitic bipolar transistor has been carried out, we show that latch problems are observed in the subhalf-micrometer range, while this feature is emphasized in the micrometer range for N-channel transistors. In addition, it is demonstrated by theoretical considerations and experimental results that these parasitic effects are strongly reduced at liquid nitrogen temperature and vanish almost entirely at liquid helium temperature. Similar improvements are obtained at low temperature in both N and P-channel SIMOX MOSFET's

Published in:

Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 1 )

Date of Publication:

Jan 1994

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