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Envelope function calculations of linear and nonlinear optical gains in a strained-layer quantum-well laser

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2 Author(s)
Ahn, Doyeol ; GoldStar Central Res. Lab., Seoul, South Korea ; Tae-kyung Yoo

The linear and nonlinear optical gain of strained-layer InGaAs-AlGaAs quantum well (QW) lasers are studied theoretically, with band mixing effects taken into account. Effects of the biaxial compressive strain of the InGaAs-AlGaAs QW on the band structure are investigated by solving for the Pikus-Bir Hamiltonian. The biaxial compressive strain separates the HH and the LH subbands by pulling down the HH subbands and pushing the LH subbands away from the valence band edge. Since the C-HH transition is dominated by the TE polarization, it is expected that the TE mode gain would be substantially larger than the TM mode gain. The gain and the gain-suppression coefficient are calculated from the complex optical susceptibility obtained by the density matrix formalism. Optical output power is calculated by solving the rate equations for the stationary states with nonlinear gain suppression. The calculated L-I characteristics shows reasonable agreement with the experimental data

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Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 12 )