By Topic

Tests of the radiation hardness of silicon strip detectors under neutron, proton, and gamma irradiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

29 Author(s)

Summary form only given, as follows. As part of a program to develop silicon central tracking systems for the next generation of high-energy, high-luminosity accelerators such as the Superconducting Super Collider and the Relativistic Heavy Ion Collider, the effects of radiation damage in silicon detectors are being studied in detail. Results on neutron and proton irradiations at Los Alamos National Laboratory and gamma ray irradiations at UC Santa Cruz have been obtained. The devices being tested include both single-sided and double-sided silicon strip detectors, as well as test structures. Results of measurements of leakage current, acceptor state creation, charge trapping, pulse shapes, and changes in interstrip resistance as a function dose and operating temperature have been obtained.<>

Published in:

Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE

Date of Conference:

2-9 Nov. 1991