By Topic

Studies of the dependence on oxidation thermal processes of effects on the electrical properties of silicon detectors by fast neutron radiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Z. Li ; Brookhaven Nat. Lab., Upton, NY, USA ; H. W. Kraner

High-resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975 degrees C to 1200 degrees C) have been exposed to fast neutron irradiation up to a fluence of a few times 10/sup 14/ n/cm/sup 2/. New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back-to-back diodes (p/sup +/-n/sup -/-p/sup +/ if n/sup -/ is not inverted to p) or resistors (p/sup +/-p-p/sup +/ if inverted) have been introduced in monitoring the possible type-inversion (n to p) under high neutron fluence. No type-inversion in the material underneath SiO/sub 2/ and the p/sup +/ contact has been observed so far for detectors made on the five oxides up to a neutron fluence of a few times 10/sup 13/ n/cm/sup 2/. However, it has been found that detectors made on higher-temperature oxides (T>or=1100 degrees C) exhibit less leakage current increase at high neutron fluence ( phi >or=10/sup 13/ n/cm/sup 2/).<>

Published in:

Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE

Date of Conference:

2-9 Nov. 1991