By Topic

Physically-based method for measuring the threshold voltage of MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Z. X. Yan ; Sch. of Eng. Sci., Simon Fraser Univ., Barnaby, BC, Canada ; M. J. Deen

A physically-based technique for measuring the threshold voltage of small geometry MOSFETs is presented. The new method, called the quasi-constant current (QCC) method, is based on the drain current equation in the subthreshold region. It defines the threshold voltage as the gate voltage required for surface band-bending of 2 phi /sub F/. Compared with some other commonly used methods, this technique has the advantages of better fitting accuracy in the subthreshold region, of extracting the threshold voltage, V/sub T//sub H/, with a unique value based on a physical definition of the surface band-bending, and of being suitable for MOS devices over a wide range of voltage biases, device dimensions, and temperatures.<>

Published in:

IEE Proceedings G - Circuits, Devices and Systems  (Volume:138 ,  Issue: 3 )