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200°C operation of semiconductor power devices

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3 Author(s)
Johnson, R.W. ; Dept. of Electr. Eng., Auburn Univ., AL, USA ; Bromstead, J.R. ; Weir, G.B.

There is a growing need for commercial and military power electronics to operate above 175°C. Changes in operating parameters at 200°C have been measured for four devices, an NPN bipolar junction transistor (BJT), an insulated gate bipolar transistor (IGBT), an N-channel metal-oxide-semiconductor field effect transistor (MOSFET), and a P-type MOS controlled thyristor (MCT). Using the results of these measurements, power supplies have been built using IGBTs and MOSFETs and operated at an ambient temperature of 200°C for up to 72 h

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Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:16 ,  Issue: 7 )