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Monolithically integrated receiver front end: In0.53Ga 0.47As p-i-n amplifier

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11 Author(s)
C. -L. Cheng ; AT&T Bell Lab., Murray Hill, NJ, USA ; R. P. H. Chang ; B. Tell ; S. M. Z. Parker
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Monolithically integrated InGaAs p-i-n amplifiers have been successfully fabricated. The structure utilizes a vertical integration of a p-i-n diode and recessed-gate InP MISFETs, while maintaining a planar surface for fine-line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFETs with aluminium phosphorous oxide as gate insulator. At 400 Mb/s, the receiver sensitivity is better than -27 dBm for 1×10-9 bit error rate

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IEEE Transactions on Electron Devices  (Volume:35 ,  Issue: 9 )