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Simulation of submicrometer GaAs MESFET's using a full dynamic transport model

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2 Author(s)
Feng, Y.-K. ; Arbeitsbereich Hochfrequenztechnik, Tech. Univ. Hamburg-Harburg, West Germany ; Hintz, A.

Nonstationary transport effects in III-V compound semiconductors are taken into account by the well-known full dynamic transport model. A solution method for its equations is proposed and applied to a two-dimensional simulation of submicrometer GaAs MESFETs. Stationary and nonstationary results are compared with results from other transport models, namely a simplified dynamic transport model, the energy transport model, and the drift-diffusion model

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Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 9 )