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Strained layer In/sub x/Ga/sub 1-x/As/GaAs and In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/P multiple-quantum-well optical modulators grown by gas-source MBE

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6 Author(s)
J. W. Kim ; Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA ; C. W. Chen ; T. J. Vogt ; L. M. Woods
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The first results on low-power p-i-n diode modulator structures using strained multiple quantum wells (MQW's) of InGaAs/InGaP grown by gas-source molecular beam epitaxy (MBE) on GaAs are presented. A comparison of transmission, reflection, and photocurrent spectra for these nonresonant devices with those fabricated from InGaAs/GaAs indicates larger modulation, with a maximum change in reflection of >42% observed at 5-V bias at a wavelength of 0.96 mu m.<>

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IEEE Photonics Technology Letters  (Volume:5 ,  Issue: 9 )